| 專著名稱: | IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology |
| 研究中心: | |
| 首席研究員: | |
| 主編單位: | IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology |
| 出版時間: | 2012-10-31 |
| 出版社: | |
| 主編: | |
| 編寫人員: | 劉洪剛 |
| 總字數(shù): | |
| 編者字數(shù): | |
| 著作性質: | 半導體器件與技術 |
| 編輯出版單位: | IEEE 11th Int. Conf. on Solid-State and Integrated Circuit Technology |
| 出版資助單位: | |
| 再版次數(shù): | |
| 印刷數(shù)量: | |
| 參編內容: | GaSb pMOSFET源漏歐姆接觸優(yōu)化 |
| 著作簡介: | In this paper, source/drain ohmic contact for GaSb pMOSFETs has been extensively studied and optimized. Different concentrations of HCl-based solutions are used to clean the non-self limiting and non-stable native oxide layer of GaSb surface before source/drain ohmic contact metal deposition. Ni/Pt/Au, Ti/Pt/Au, Ni/Au, and Pt/Ti/Pt/Au contacts to p-type GaSb are investigated. The Ni/Pt/Au ohmic contact shows an optimal specific contact resistance of about 6.89×10-7 Ω·cm2 with 1 min RTA at 250 oC after the contact metal deposition. |
| 其它備注: | 國外出版-外文 |
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